| Citation: | ZHANG Jianhua, XIA Yong, DING Li, et al. Sputtering model of SiO2 for low energy Ar+ and Xe+ bombardment[J]. Journal of Beijing University of Aeronautics and Astronautics, 2017, 43(9): 1766-1772. doi: 10.13700/j.bh.1001-5965.2016.0744(in Chinese)
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In order to obtain the more accurate sputtering model of SiO2 for bombardment with low energy Ar+ and Xe+, three existing models, Pencil model, Bach model and Seah model, were investigated and the deficiencies were analyzed. On the basis of Seah model, the sputtering parameters and surface binding energy were calculated by equivalent atomic method. Meanwhile, a new calculation method of sputtering threshold was applied to form a new advanced model. Combined with the experimental data of SiO2 for bombardment at normal incidence with Ar+ and Xe+, the calculation results of the four models were contrastively analyzed. The results show that, for both Ar+ and Xe+ bombardment, the root mean square error of the new advanced model is the smallest and the goodness of fit is the largest, which means the new advanced model is better than other three models. Under the low energy condition, the new advanced model can calculate the sputtering yield of SiO2 bombarded by Ar+ and Xe+ more accurately.
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