Error correction code for Flash memory

Flash memory is a non-volatile storage device, as the technology continuously scales down and storage density requirement increases up, the storage reliability and lifetime of flash memory become two of the most serious challenges. According to the multi-level cell (MLC) NAND Flash structural features and operating characteristics, an error correction coding approach based on orthogonal mapping was proposed, and the error correcting ability was analyzed. On this basis, two typical application scenarios in flash memory system were presented, i.e., distributed multi-user access storage and error-free recovery of historical data. Moreover, the lifetime of flash is strictly limited by the block-erasures operation; this coding scheme could utilize the bad block to enhance the flash lifetime. The analysis shows that this coding scheme could achieve multiple practical applications with simple adjustment to the encoder module.