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Volume 40 Issue 11
Nov.  2014
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Journal of Beijing University of Aeronautics and Astronautics  > 2014  >  40(11): 1500-1506.
Su Fei, Lu Zixing, Liu Ping, et al. Finite element analysis of electromigration induced stress in through-silicon-via[J]. Journal of Beijing University of Aeronautics and Astronautics, 2014, 40(11): 1500-1506. doi: 10.13700/j.bh.1001-5965.2013.0646(in Chinese)
Citation: Su Fei, Lu Zixing, Liu Ping, et al. Finite element analysis of electromigration induced stress in through-silicon-via[J]. Journal of Beijing University of Aeronautics and Astronautics, 2014, 40(11): 1500-1506. doi: 10.13700/j.bh.1001-5965.2013.0646(in Chinese)
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Finite element analysis of electromigration induced stress in through-silicon-via

doi: 10.13700/j.bh.1001-5965.2013.0646

  • School of Aeronautic Science and Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100191, China

  • Received Date: 14 Nov 2013
  • Publish Date: 20 Nov 2014
    Abstract
  • Through-silicon-via (TSV) plays a key role in chip's vertical interconnection in 3D electronic package, so its reliability shows great importance. As the current density through TSV increasing, current induced stress has larger and larger influence on the TSV's reliability. The methodology for evaluation of electromigration induced stress in TSV was developed based on the coupling equation of stress-mass diffusion and the principle of finite element method (FEM), together with the user defined element on the platform of ABAQUS. The numerical simulation of this model was set and its accuracy was verified with analytical solution. The electromigration problem was simulated with a finite element model; The evolution and distribution of electromigration induced stress, strain and vacancy concentration in copper pour hatch were described. So the reliability of 3D electronic package could be assessed someway.

     

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    • References(15)
  • [1]
    Tan Y C,Tan C M,Zhang X W,et al.Electromigration performance of through silicon via(TSV)-a modeling approach.[J].Microelectronics Reliability,2010,50(9-11):1336-1340
    [2]
    Pak J,Pathak M,Lim S K,et al.Modeling of electromigration in through-silicon-via based 3D IC[C]//Electronic Components and Technology Conference (ECTC).Piscataway,NJ:Institute of Electrical and Electronics Engineers Inc,2011:1420-1427
    [3]
    杨卫.力电失效学[M].北京:清华大学出版社,2001 Yang Wei.Mechatronic reliability[M].Beijing:Tsinghua University Press,2001(in Chinese)
    [4]
    Blech I A.Electromigration in thin aluminum films on titanium nitride[J].Journal of Applied Physics,1976,47(4):1203-1208
    [5]
    Blech I A,Herring C.Stress generation by electromigration[J].Applied Physics Letters,1976,29(3):131-133
    [6]
    Wang P C,Cargill G S,Noyan I C,et al.Electromigration-induced stress in aluminum conductor lines measured by x-ray microdiffraction[J].Applied Physics Letters,1998,72(11):1296-1298
    [7]
    Basaran C,Lin M.Electromigration induced strain field simulations for nanoelectronics lead-free solder joints [J].International Journal of Solids and Structures,2007,44(14/15):4909-4924
    [8]
    Xu L H,Pang J H L.In-situ electromigration study on Sn-Ag-Cu solder joint by digital image speckle analysis[J].Journal of Electronic Materials,2006,35(11):1993-1999
    [9]
    Ye H,Basaran C,Hopkins D C.Numerical simulation of stress evolution during electromigration in IC interconnect lines[J].IEEE Transactions on Component and Packaging Technologies,2003,26(3):673-681
    [10]
    Sarychev M E,Zhinikov Y V,Borucki L,et al.General model for mechanical stress evolution during electromigration[J].Journal of Applied Physics,1999,86(6):3068-3075
    [11]
    王勖成.有限单元法[M].北京:清华大学出版社,2003 Wang Xucheng.Finite element method[M].Beijing:Tsinghua University Press,2003(in Chinese)
    [12]
    Basaran C,Lin M H,Li S D.Computational simulation of electromigration induced damage in copper interconnects[C]//Proceedings of the 2007 Summer Computer Simulation Conference.Vista,CA:the Society for Modeling and Simulation International,2007:261-268
    [13]
    Oates A S,Lin M H.Electromigration failure distributions of Cu/low-k dual-damascene vias:impact of the critical current density and a newreliability extrapolation methodology[J].IEEE Trans Device Mater Reliab,2009,9(2):244-254
    [14]
    Roy A,Tan C M.Probing into the asymmetric nature of electromigration performance of submicron interconnect via structure[J].Thin Solid Films,2007,515(7/8):3867-3874
    [15]
    Chen Z H,Lv Z C,Wang X F,et al.Modeling of electromigration of the through silicon via interconnects[C]//11th International Conference on Electronic Packaging Technology & High Density Packaging.New York:Association for Computing Machinery,2010:1221-1225
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