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Volume 40 Issue 7
Jul.  2014
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Journal of Beijing University of Aeronautics and Astronautics  > 2014  >  40(7): 1001-1005.
Du Huicong, Liu Fangjun, Zhang Wei, et al. Simulation of voltage doubling rectifying circuit in 150 kV high-voltage inverter power supply[J]. Journal of Beijing University of Aeronautics and Astronautics, 2014, 40(7): 1001-1005. doi: 10.13700/j.bh.1001-5965.2013.0503(in Chinese)
Citation: Du Huicong, Liu Fangjun, Zhang Wei, et al. Simulation of voltage doubling rectifying circuit in 150 kV high-voltage inverter power supply[J]. Journal of Beijing University of Aeronautics and Astronautics, 2014, 40(7): 1001-1005. doi: 10.13700/j.bh.1001-5965.2013.0503(in Chinese)
shu

Simulation of voltage doubling rectifying circuit in 150 kV high-voltage inverter power supply

doi: 10.13700/j.bh.1001-5965.2013.0503

  • 1. School of Mechanical Engineering and Automation, Beijing University of Aeronautics and Astronautics, Beijing 100191, China;

  • 2. Institute of Beijing Space Launch Technology, Beijing 100076, China

  • Received Date: 18 Sep 2013
  • Publish Date: 20 Jul 2014
    Abstract
  • According to the characteristics of the electron beam high-voltage inverter power supply, high voltage transformer and voltage doubling rectifying circuit were combined for producing a 150 kV high voltage. Several common doubler rectifier circuit models were set up. The effect of capacitance parameters on the output voltage characteristic was simulated by using the MULTISIM software, especially the capacitance parameters of Cockcroft-Walton full wave voltage doubling rectifying circuit. Cockcroft-Walton full wave voltage doubling rectifying circuit was chosen. Experimental results show that the Cockcroft-Walton full wave voltage doubling rectifying circuit has a better performance and could get a better output voltage. The design scheme could meet the operating requirements.

     

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