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Volume 40 Issue 6
Jun.  2014
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Journal of Beijing University of Aeronautics and Astronautics  > 2014  >  40(6): 839-843.
Dong Gang, Feng Guoqiang, Chen Rui, et al. Single event charge collection in CMOS device[J]. Journal of Beijing University of Aeronautics and Astronautics, 2014, 40(6): 839-843. doi: 10.13700/j.bh.1001-5965.2013.0435(in Chinese)
Citation: Dong Gang, Feng Guoqiang, Chen Rui, et al. Single event charge collection in CMOS device[J]. Journal of Beijing University of Aeronautics and Astronautics, 2014, 40(6): 839-843. doi: 10.13700/j.bh.1001-5965.2013.0435(in Chinese)
shu

Single event charge collection in CMOS device

doi: 10.13700/j.bh.1001-5965.2013.0435

  • 1. Graduate School, Chinese Academy of Sciences, Beijing 100049, China;

  • 2. National Space Science Center, Chinese Academy of Sciences, Beijing 100190, China

  • Received Date: 30 Jul 2013
  • Publish Date: 20 Jun 2014
    Abstract
  • Three dimensions technology computer aided design (3D TCAD) simulation was used to study single event transient (SET) in an invert with 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. The charge transport and charge collection mechanism were analyzed in both positive channel-metal-oxide-semiconductor field-effect transistor (PMOSFET) and negative channel-metal-oxide-semiconductor field-effect transistor (NMOSFET) by numerical simulation. Results show that the radiation induced charge collection mechanism in an inverter device is different from single MOSFET due to coupling circuit effect, and the parasitic bipolar amplification component takes large proportion in charge collection of PMOSFET, but not in NMOSFET. The SET voltage pulse in PMOSFET is wider than NMOSFET and PMOSFET is more sensitive for SET in the submicron technology integrated circuit. The results provide the foundation for SET modeling in digital microcircuits and the model is used for SET simulation in large scale integrated circuits.

     

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